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| savantic semiconductor product specification silicon pnp power transistors 2N5611A description with to-66 package excellent safe operating area low collector saturation voltage applications for general-purpose amplifier ; and switching applications pinning(see fig.2) pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta= ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -120 v v ceo collector-emitter voltage open base -100 v v ebo emitter-base voltage open collector -5 v i c collector current -5 a p d total power dissipation t c =25 25 w t j junction temperature 150 t stg storage temperature -65~150 thermal characteristics symbol parameter value unit r th j-c thermal resistance junction to case 4.37 /w fig.1 simplified outline (to-66) and symbol
savantic semiconductor product specification 2 silicon pnp power transistors 2N5611A characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =-50ma ;i b =0 -100 v v cesat collector-emitter saturation voltage i c =-1a; i b =-0.1a -0.5 v v be base-emitter on voltage i c =-2.5a ; v ce =-5v -1.5 v i cbo collector cut-off current v cb =rated v cbo ; i e =0 -0.1 ma i ceo collector cut-off current v ce = rated v ceo ,i b =0 -1.0 ma i ebo emitter cut-off current v eb =-5v; i c =0 -0.1 ma h fe dc current gain i c =-2.5a ; v ce =-5v 30 150 f t transition frequency i c =-0.5a ; v ce =-10v 60 mhz savantic semiconductor product specification 3 silicon pnp power transistors 2N5611A package outline fig.2 outline dimensions |
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